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 BS170
Preferred Device
Small Signal MOSFET 500 mA, 60 Volts
N-Channel TO-92 (TO-226)
Features http://onsemi.com
* Pb-Free Package is Available*
MAXIMUM RATINGS
Rating Drain -Source Voltage Gate-Source Voltage - Continuous - Non-repetitive (tp 50 ms) Drain Current (Note) Total Device Dissipation @ TA = 25C Operating and Storage Junction Temperature Range Symbol VDS VGS VGSM ID PD TJ, Tstg Value 60 20 40 0.5 350 -55 to +150 Unit Vdc Vdc Vpk Adc mW C
500 mA, 60 Volts RDS(on) = 5.0 W
N-Channel D
G S
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. NOTE: The Power Dissipation of the package may result in a lower continuous drain current. 12 3
TO-92 (TO-226) CASE 29 STYLE 30
MARKING DIAGRAM & PIN ASSIGNMENT
BS170 AYWWG G
1 Drain
2 Gate
3 Source
BS170 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
(c) Semiconductor Components Industries, LLC, 2005
Preferred devices are recommended choices for future use and best overall value.
1
August, 2005 - Rev. 5
Publication Order Number: BS170/D
BS170
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Gate Reverse Current (VGS = 15 Vdc, VDS = 0) Drain-Source Breakdown Voltage (VGS = 0, ID = 100 mAdc) ON CHARACTERISTICS (Note 1) Gate Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) Static Drain-Source On Resistance (VGS = 10 Vdc, ID = 200 mAdc) Drain Cutoff Current (VDS = 25 Vdc, VGS = 0 Vdc) Forward Transconductance (VDS = 10 Vdc, ID = 250 mAdc) SMALL-SIGNAL CHARACTERISTICS Input Capacitance (VDS = 10 Vdc, VGS = 0, f = 1.0 MHz) SWITCHING CHARACTERISTICS Turn-On Time (ID = 0.2 Adc) See Figure 1 Turn-Off Time (ID = 0.2 Adc) See Figure 1 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. ton toff - - 4.0 4.0 10 10 ns ns Ciss - - 60 pF VGS(Th) rDS(on) ID(off) gfs 0.8 - - - 2.0 1.8 - 200 3.0 5.0 0.5 - Vdc W mA mmhos IGSS V(BR)DSS - 60 0.01 90 10 - nAdc Vdc Symbol Min Typ Max Unit
ORDERING INFORMATION Device
BS170 BS170G BS170RLRA BS170RLRAG BS170RLRM BS170RLRMG BS170RLRP BS170RLRPG BS170RL1 BS170RL1G BS170ZL1 BS170ZL1G
Package
TO-92 (TO-226) TO-92 (TO-226) (Pb-Free) TO-92 (TO-226) TO-92 (TO-226) (Pb-Free) TO-92 (TO-226) TO-92 (TO-226) (Pb-Free) TO-92 (TO-226) TO-92 (TO-226) (Pb-Free) TO-92 (TO-226) TO-92 (TO-226) (Pb-Free) TO-92 (TO-226) TO-92 (TO-226) (Pb-Free)
Shipping
1000 Unit/Tube 1000 Unit/Tube 2000 Tape & Reel 2000 Tape & Reel 2000 Tape & Reel 2000 Tape & Reel 2000 Tape & Reel 2000 Tape & Reel 2000 Tape & Reel 2000 Tape & Reel 2000 Tape & Reel 2000 Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
http://onsemi.com
2
BS170
RESISTIVE SWITCHING
+25 V Vin PULSE GENERATOR 50 W 40 pF 50 W 1.0 MW ton 125 W 20 dB 50 W ATTENUATOR TO SAMPLING SCOPE 50 W INPUT Vout OUTPUT V INVERTED out 10% INPUT (Vin Amplitude 10 Volts) Vin PULSE WIDTH toff
90% 10% 90% 50%
Figure 1. Switching Test Circuit
Figure 2. Switching Waveforms
2.0 VGS(th), THRESHOLD VOLTAGE 1.6 I D(on) , DRAIN CURRENT (AMPS) VDS = VGS ID = 1.0 mA
2.0 VGS = 10 V 1.6 9.0 V 8.0 V 1.2 7.0 V 6.0 V 5.0 V 0.4 4.0 V
1.2
0.8
0.8
0.4 0 50
100 0 50 TJ, JUNCTION TEMPERATURE (C)
150
0
1.0 2.0 3.0 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
4.0
Figure 3. VGS(th) Normalized versus Temperature
Figure 4. On-Region Characteristics
2.0 I D(on) , DRAIN CURRENT (AMPS) 1.6
VGS = 10 V 9.0 V 8.0 V C, CAPACITANCE (pF)
100 80 VGS = 0 V
1.2 7.0 V 0.8 6.0 V 0.4 5.0 V 4.0 V 0 20 10 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 40
60
40 Ciss 20 Coss Crss 0 10 20 30 40 50 60 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. Output Characteristics
Figure 6. Capacitance versus Drain-To-Source Voltage
http://onsemi.com
3
BS170
PACKAGE DIMENSIONS
TO-92 (TO-226) CASE 29-11 ISSUE AL
A R P L
SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 ---
B
K
XX G H V
1
D J C SECTION X-X N N
DIM A B C D G H J K L N P R V
STYLE 30: PIN 1. DRAIN 2. GATE 3. SOURCE
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.
http://onsemi.com
4
BS170/D


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